050-7114 rev c 3-2009 maximum ratings all ratings: t c = 25c unless otherwise specified. APT10026JFLL 1000v 30a 0.28 ?? ?? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com sot-227 g s s d isotop ? "ul recognized" ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular sot-227 package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 15a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 1000 0.28 100 500 100 35 APT10026JFLL 1000 30 120 30 40 595 4.76 -55 to 150 300 30 50 3200 power mos 7 r fredfet
dynamic characteristics APT10026JFLL 050-7114 rev c 3-2009 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -38a) peak diode recovery dv / dt 5 reverse recovery time (i s = -38a, di / dt = 100a/s) reverse recovery charge (i s = -38a, di / dt = 100a/s) peak recovery current (i s = -38a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 30 120 1.3 18 t j = 25c 310 t j = 125c 625 t j = 25c 2.0 t j = 125c 6.0 t j = 25c 15 t j = 125c 26 symbol r jc r ja min typ max 0.21 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 7.11mh, r g = 25 ? , peak i l = 30a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 30a di / dt 700a/s v r 1000 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain (" miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 38a @ 25c resistive switching v gs = 15v v dd = 500v i d = 38a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 667v, v gs = 15v i d = 38a, r g = 3 ? inductive switching @ 125c v dd = 667v v gs = 15v i d = 38a, r g = 3 ? min typ max 7114 1268 224 267 34 173 17 8 39 9 1196 713 2014 971 unit pf nc ns j
050-7114 rev c 3-2009 typical performance curves APT10026JFLL v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c 7.5v 5v 5.5v 6.5v 6v 7v 15 &10v v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 15a v gs = 10v 90 80 70 60 50 40 30 20 10 0 1.4 1.3 1.2 1.1 1.0 0.9 0.8 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 120 100 80 60 40 20 0 30 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 0.0492 0.142 0.0189 0.0273f 0.469f 44.2f power (watts) junction temp. (c) rc model case temperature. ( c) normalized to v gs = 10v @ i d = 15a
APT10026JFLL 050-7114 rev c 3-2009 e on e off v dd = 667v r g = 3 ? t j = 125 c l = 100 h e on includes diode reverse recovery. v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) c rss c iss c oss t j =+150c t j =+25c 1 10 100 1000 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 10ms 1ms 100s t c = +25c t j = +150c single pulse operation here limited by r ds (on) i d = 38a 120 50 10 1 16 12 8 4 0 30,000 10,000 1,000 100 200 100 10 1 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 667v r g = 3 ? t j = 125c l = 100 h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 5 10 15 20 25 30 35 40 45 50 55 60 5 10 15 20 25 30 35 40 45 50 55 60 5 101520 2530354045505560 0 5 10 15 20 25 30 3540 45 50 v dd = 667v i d = 38a t j = 125 c l = 100 h e on includes diode reverse recovery. t d(on) t d(off) 160 140 120 100 80 60 40 20 0 4000 3500 3000 2500 2000 1500 1000 500 0 v dd = 667v r g = 3 ? t j = 125c l = 100 h 100 80 60 40 20 0 10000 8000 6000 4000 2000 0 v ds = 500v v ds = 200v v ds = 800v
050-7114 rev c 3-2009 typical performance curves APT10026JFLL figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) ????(4 places) 3.3 (.129) 3.6 (.143) * source source terminals are shorted internally. current handling capability is equal for either source terminal. 90% 90% 10% t f 0 t d(off) t j = 125c switching energy 10% 90% 10% t r 5% t d(on) switching energy 5%
|
